Thermal scanning probe lithography of topological regions in disordered Sb₂Te₃ thin films

We demonstrate the use of thermal scanning probe lithography (t-SPL) for writing on the disordered thin (30-40nm) films of Sb₂Te₃ to define nanoscale regions of low disorder with topological signatures, such as weak antilocalization (WAL) quantum interference correction to classical Drude conductivity. We will discuss the results of non-local transport measurements and chiral effects associated with the edges.