CVD Growth of Large area single-crystal and bilayer MoS₂ on Molten Glass

The rich and diverse physics with novel optical and electrical transport properties of transition metal dichalcogenides (TMDCs) offers unprecedented opportunities for electronics and optoelectronics applications. However, large area CVD growth of multi-layer TMDC film with high mobility is still a challenge. Here, we present an approach for growing monolayer and bilayer MoS₂ with clear crystalline structures using a modified atmospheric pressure chemical vapor deposition (APCVD) method. Moreover, molten glass is utilized as a growth substrate for isotropic and smooth growth, which can significantly suppress nucleation density and promote larger domain growth. We can successfully obtain MoS₂ monolayer and bilayer with average single domain size up to 500 and 50 μm in ten minutes, respectively. This low-cost growth of high-quality large grain size of 2D TMDCs provides a pathway for high-performance 2D electronic devices.