Magneto-electronic properties of buckled monolayer GaAs nanoribbons

Magneto-electronic properties of buckled monolayer GaAs nanoribbons are studied by the developed generalized tight-binding model, where the edge orientation, buckled structure, multi-orbital chemical bondings, spin-orbit coupling, and magnetic field are considered simultaneously. Three groups of quasi Landau levels (QLLs) near the Fermi level are induced by the magnetic quantization, whose initial energies, degeneracy, energy spacings, and magnetic-field-dependence are investigated. The state probabilities of QLLs exhibit specific oscillation patterns, whose localization centers, node regularities, and energy-dependent variations of the major/minor orbitals are analyzed. The given density of states directly reflects the main characteristics of the QLL energy spectra in the structure, height, number, and frequency of the QLL peaks. The external-field-controlled gap modulations are explored in detail. These predicted magneto-electronic properties could be verified by scanning tunneling spectroscopy measurements and are helpful in designing electronic devices made of low-dimensional materials.