Nonvolatile Memory Based on Black Phosphorous

Over the past few years, few-layer black phosphorus (BP) has attracted tremendous research efforts due to their extraordinary properties. The superior ambipolar properties, higher mobility than TMDCs, and comparable drain current modulation up to ~10⁵ with TMDCs promises black phosphorus to be a good candidate for future flexible and transparent memory devices. In this work, we demonstrated floating memory devices based on BP FETs with patterned local bottom gate geometry and another BP nanosheet as charge trapping layer on a silicon substrate. As expected, the devices shown a significant hysteresis and a substantial memory window thanks to the superior trap capacity of the BP bottom gate stack. Meanwhile, a robust program/erase ratio of over ~10³ and a stable endurance of more than 1000 s have been achieved. Moreover, a memory circuit of a resistive-load inverter was demonstrated. Therefore, nonvolatile memory based on black phosphorous film opens one possible way to fabricate high-performance nonvolatile memories and inverter logic circuits.