Nonvolatile Memory Based on Few-layer Black Phosphorous

Over the past few years, few-layer black phosphorus (BP) has attracted tremendous research efforts due to their extraordinary electronic and optical properties. In this work, we demonstrated floating-gate memory devices based on BP transistors with pre-patterned local-gate structures and another BP film as charge trapping layer on a silicon substrate. As expected, the devices exhibited a significant current hysteresis and a substantial memory window thanks to the superior trapping capacity of the BP floating gate. Meanwhile, a robust program/erase ratio of over ~10³ and a stable endurance of more than 1000 s have been achieved. Moreover, a memory circuit of a resistive-load inverter was demonstrated. Therefore, nonvolatile memory based on black phosphorous film opens a new possibility to fabricate high-performance nonvolatile memories and inverter logic circuits.