Quantum electronic transport in InAs semiconductor nanowire

InAs nanowire provides a useful platform for developing high-mobility quantum electronic devices. In particular, the InAs nanowires, grown by high vacuum molecular beam epitaxy, exhibit conductance quantization behavior at low temperature, which is a signature of quasi one-dimensional (1D) electronic transport. When the magnetic field is applied, the spin degeneracy in the 1D subbands can be lifted due to the Zeeman effect. The strong spin-orbit interaction in InAs also can induce spin splitting of conduction subbands. Those electronic properties are essential to build 1D topological superconducting system in the nanowire. Here we report quantum electronic transport properties of InAs nanowire with varying gate voltage, temperature and magnetic field.