Scanning Tunneling Spectroscopic Studies of Surface States on Emergent Topological Insulator BiTeI

ORAL

Abstract

We use scanning tunneling microscopy and spectroscopy to investigate the emergent topological insulator BiTeI. We discover three different kinds of surfaces where the Fermi level lies above, below, and inside the band gap. By imaging the real- and momentum-space differential conductance, we observe charging effects of acceptor-type defects, as well as quasiparticle interference (QPI) up to 1.2 eV above the Fermi level. Furthermore, QPI modes reveal the absence of backscattering, which implies that Rashba spin splitting persists up to this high energy.

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Presenters

  • Jianfeng Ge

    Department of Physics, Harvard University

Authors

  • Jianfeng Ge

    Department of Physics, Harvard University

  • Cyrus Hirjibehedin

    London Centre for Nanotechnology, University College London

  • Daniel Larson

    Department of Physics, Harvard University, Harvard Univ

  • Yang He

    Department of Physics, Harvard University, Physics, Harvard University

  • Zhihuai Zhu

    Department of Physics, Harvard University

  • Mohammed Saghir

    Department of Physics, University of Warwick

  • Geetha Balakrishnan

    Department of Physics, University of Warwick, Physics, University of Warwick, University of Warwick

  • Jennifer Hoffman

    Physics, Harvard University, Department of Physics, Harvard University