Designing defect-based qubit candidates in wide-gap binary semiconductors

The development of novel quantum bits is key to extend the scope of solid-state quantum information science and technology. Here, using first-principles calculations, we propose that large metal ion - vacancy complexes are promising qubit candidates in two binary crystals: 4H-SiC and w-AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy complexes is energetically favorable in both solids; these defects have spin-triplet ground states and electronic structures similar to those of the diamond NV center and the SiC di-vacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may ensure stability against defect diffusion. In order to support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting and hyperfine parameters. The defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.