Temperature-Dependent Phonons in Single-Crystal FeGe2

ORAL

Abstract

Inelastic neutron scattering (INS) was used to measured phonon dispersions in a single crystal of FeGe2 with the C16-structure at 300, 500 and 635 K. Phonon density of states (DOS) were also measured on polycrystalline FeGe2 from 325 to 1050 K, and the Fe partial DOS was obtained from polycrystalline 57FeGe2 by nuclear resonant inelastic x-ray scattering (NRIXS) at 300 K. The thermal broadening of high-energy modes is the dominant feature in the temperature dependence of the phonon spectrum. The energy shifts of the low- and high-energy parts of the spectrum were almost the same. DFT calculations performed with the quasiharmonic approximation (QHA) gave results in reasonable, but not excellent agreement with the experimental thermal energy shifts. The thermal broadening of the phonon spectrum and dispersions, especially at high energies, indicates a significant cubic anharmonicty to second order that should also induce phonon shifts. The different anharmonic contributions largely cancel, however, giving average phonon shifts in fair agreement to calculations with the QHA.

Presenters

  • Yang Shen

    Department of Applied Physics and Materials Science, California Institute of Technology

Authors

  • Yang Shen

    Department of Applied Physics and Materials Science, California Institute of Technology

  • Hillary Smith

    Department of Applied Physics and Materials Science, California Institute of Technology, Applied Physics and Materials Science Department, California Institute of Technology

  • Brent Fultz

    Applied Physics and Materials Science, Caltech, Dept. Appl. Phys. & Mater. Sci., California Institute of Technology, Applied Physics and Materials Science, California Institute of Technology, Department of Applied Physics and Materials Science, California Institute of Technology, Department of Applied Physics and Materials Science, Caltech, Materials Science, California Institute of Technology, Applied Physics and Materials Science Department, California Institute of Technology