Performance Enhancement of Many-Layer-Graphene based Memristors by Fermi Energy Lowering

The search for high-performance non-volatile memory structures remains essential for the research and development of resistive random access memory (RRAM) technology. In addition to the extensive exploration of novel materials, the optimization of electrode/interface properties also serves as a primary objective. In this work, we study the resistive switching properties of many-layer-graphene (MLG) /Nb:SrTiO₃ (NSTO) interfaces. We find that straightforward bromine intercalation leads to improvements of on/off ratios by more than a factor of 100 and a greater stability, which we attribute to higher Schottky barriers associated with the bromination-induced Fermi energy lowering in MLG. Considering the rapid growth in the discovery and understanding of two-dimensional (2D) material systems, our findings here suggest that, for NSTO and other interface-type RRAM devices, the integration of 2D materials via van der Waals bonding opens new opportunities for the design of novel and emerging RRAM devices with versatile and superior functionalities.