Synthesis and Characterization of High-Mobility BaSnO3 Membranes

ORAL

Abstract

Doped BaSnO3 is a wide band-gap semiconductor that is known to exhibit high electron mobility at room temperature, showing great prospects as an alternative transparent conducting oxide to the industry standard indium-tin-oxide. Flexible transparent conducting oxides are of special interest for future photonics and optoelectronic devices but realizing high-quality films as flexible materials has been a challenge. In this work, we will discuss our efforts to synthesize and characterize freestanding membranes of La-doped BaSnO3 (BLSO) films. The films were deposited using pulsed laser deposition on a hygroscopic pseudo-perovskite buffer layer, which acts as a sacrificial layer that can be selectively etched to produce membranes1. Using this technique, we can transfer complex oxides and heterostructures onto flexible substrates. We find that the electron mobility of the freestanding BLSO films is comparable to the as grown films, paving the way for the exploration of the strain-dependent BLSO transport properties for potential flexible electronics applications.

1D. Lu et al., Nat. Mater. 15, 1255-1260 (2016).

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Presenters

  • Prastuti Singh

    Department of Applied Physics, Stanford University

Authors

  • Prastuti Singh

    Department of Applied Physics, Stanford University

  • Adrian Swartz

    Department of Applied Physics, Stanford University, Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford Institute for Materials and Energy Sciences, Stanford University, SLAC National Accelerator, Stanford University

  • Di Lu

    Department of Physics, Stanford Institute for Materials and Energy Sciences, Stanford University, Department of Physics, Stanford University, Stanford Univeristy, Geballe Laboratory for Advanced Materials, Stanford University

  • Seung Sae Hong

    Department of Applied Physics, Stanford Institute for Materials and Energy Sciences, Stanford University, SLAC National Accelerator Laboratory, Applied Physics, Stanford University, Department of Applied Physics, Stanford University, Stanford Univeristy

  • Kazunori Nishio

    SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Geballe Laboratory for Advanced Materials, SLAC National Accelerator Laboratory, Stanford University

  • Yasuyuki Hikita

    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, SLAC National Accelerator Laboratory, Stanford institute for materials energy sciences, SLAC National accelerator Laboratory

  • Harold Hwang

    Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, CA, United States, Stanford Institute for Materials and Energy Science, Department of Applied Physics, Stanford University, Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford Institute for Materials and Energy Sciences, Stanford University, SLAC National Accelerator, Applied Physics, Stanford University, Stanford Univ, Stanford University, Stanford Univeristy