Mechanical and electrical control of oxygen vacancies in strained Nb:SrTiO3 thin films

ORAL

Abstract

Gaining control over the concentration and distribution of cationic and anionic defects is a novel route to induce new functional properties in transition metal oxides. For the particular case of SrTiO3 (STO), local manipulation of oxygen vacancies (VO) in thin films plays a crucial role on the magnetic and thermoelectric properties of this relevant material.
The strontium vacancies (VSr) also could influence the structural properties of the STO thin films, changing the characteristic rotation pattern of the TiO6 octahedra in order to accommodate the epitaxial strain.
In this work, we present the experimental determination of the enthalpy of formation, DH, and diffusion coefficient, D, of VO in STO thin films, as a function of strain. Our results demonstrate that both, compressive and tensile strain, lead to a decrease of DH and an increase of D[1]. Additionally, we show the possibility to manipulate VO using not only the external electric field produced by Atomic Force Microscopy, but also through the mechanical force exerted by the tip.
Regarding VSr, we observed that the presence of the VSr determine the rotation pattern of TiO6 octahedra, which influences the anisotropic magneto-transport properties of the thin films[1].


[1]L. Iglesias et Al., Phys. Rev. B 95, 165138(2017)

Presenters

  • Lucía Iglesias

    Physics-chemistry, University of Santiago de Compostela

Authors

  • Lucía Iglesias

    Physics-chemistry, University of Santiago de Compostela

  • Andrés Gómez

    Institut de Ciència de Materials de Barcelona ICMAB

  • Marti Gich

    Institut de Ciència de Materials de Barcelona ICMAB

  • Francisco Rivadulla

    Physics-chemistry, University of Santiago de Compostela, 1Centro de Investigaciones en Química, Bioloxica e Materiais Moleculares (CIQUS), University of Santiago de Compostela