Electrostatic tuning of strongly coupled superconductor-semiconductor heterostructures

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor heterostructures. Using a self-consistent Poisson-Schrodinger approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong coupling regime and identify the impact of the applied gate voltage on the coupling between semiconductor and superconductor. We show how the induced superconducting gap is modified by redistributing the density of states across the interface upon application of gate voltage. We show that these changes of the heterostructure wave functions can significantly modify the effective g-factor. We map out the topological phase diagrams of InAs/Al and InSb/Al wires and show the redistribution of Majorana states across SM/SC interface.