Gating the superconducting transition in gallium doped silicon

ORAL

Abstract

We have fabricated devices with metal gates separated by an oxide layer from a superconducting channel created by heavily gallium-doped silicon and subsequent annealing. These devices are analogues to metal-oxide-semiconductor (MOS) devices but here the gallium doping causes a superconducting transition to be observed just below 7K [1].

We report on the effects different gate voltages have on the superconducting transition. As in traditional MOS devices, the gate should modulate the carrier density in the now superconducting silicon channel, and it has been reported [2] that the presence of this superconducting transition is indeed related to carrier density in the superconducting channel.

[1] R. Skrotzki et. al., Appl. Phys. Lett. 97, 192505 (2010).
[2] V. Heera, et. al., Appl. Phys. Lett. 100, 262602 (2012).

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Presenters

  • Brandur Thorgrimsson

    Physics, University of Wisconsin-Madison

Authors

  • Brandur Thorgrimsson

    Physics, University of Wisconsin-Madison

  • Evan MacQuarrie

    Physics, University of Wisconsin-Madison

  • Nathan Holman

    Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison

  • J. P. Dodson

    Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison, Physics, University of Wisconsin: Madison

  • Tom McJunkin

    Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison

  • Ryan Foote

    Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison

  • Robert McDermott

    Univ of Wisconsin, Madison, Physics, University of Wisconsin - Madison, Physics, University of Wisconsin-Madison, Physics, Univ of Wisconsin-Madison, Physics, University of Wisconsin Madison, University of Wisconsin-Madison

  • Mark Friesen

    Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison, University of Wisconsin-Madison, Department of Physics, Univ of Wisconsin, Madison, Department of Physics, University of Wisconsin - Madison, Department of Physics, University of Wisconsin-Madison, Physics, Univ of Wisconsin, Madison

  • Maxim Vavilov

    Physics, University of Wisconsin-Madison, Department of Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison, University of Wisconsin-Madison, Physics, University of Wisconsin Madison

  • Alex Levchenko

    Physics, University of Wisconsin-Madison, University of Wisconsin, Madison, Univ of Wisconsin, Madison, University of Wisconsin - Madison

  • Susan Coppersmith

    Physics, University of Wisconsin-Madison, Univ of Wisconsin, Madison, University of Wisconsin-Madison, Physics, University of Wisconsin: Madison, Department of Physics, Univ of Wisconsin, Madison, Department of Physics, University of Wisconsin - Madison, Department of Physics, University of Wisconsin-Madison, Physics, Univ of Wisconsin, Madison

  • M. A. Eriksson

    Physics, University of Wisconsin-Madison, University of Wisconsin-Madison, Physics, University of Wisconsin: Madison, Univ of Wisconsin, Madison, Department of Physics, University of Wisconsin-Madison