Epitaxial angle of MoS2 grown on h-BN: A first principle and machine learning study
ORAL
Abstract
We will report our density functional theory and machine learning study of the epaxial angle of MoS2 grown on h-BN. We will show that the preferred epitaxial angle is zero degree. Interestingly, in the lowest energy alignment, the lattice mismatch between MoS2 and h-BN supercells is not zero. Instead, the MoS2 is found to be slightly larger than BN with a mismatch of about -0.01 %. The dimension of supercell is 72.78 Å. The small mismatch suggests that the resultant MoS2/h-BN is not completely flat but does not experience any significant surface corrugation. The negative mismatch suggests that larger dimension of MoS2 is for accommodating a small corrugation of the MoS2 layer.
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Presenters
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Talat Rahman
Physics, University of Central Florida
Authors
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Talat Rahman
Physics, University of Central Florida
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Duy Le
Physics, University of Central Florida