Epitaxial angle of MoS2 grown on h-BN: A first principle and machine learning study

ORAL

Abstract

We will report our density functional theory and machine learning study of the epaxial angle of MoS2 grown on h-BN. We will show that the preferred epitaxial angle is zero degree. Interestingly, in the lowest energy alignment, the lattice mismatch between MoS2 and h-BN supercells is not zero. Instead, the MoS2 is found to be slightly larger than BN with a mismatch of about -0.01 %. The dimension of supercell is 72.78 Å. The small mismatch suggests that the resultant MoS2/h-BN is not completely flat but does not experience any significant surface corrugation. The negative mismatch suggests that larger dimension of MoS2 is for accommodating a small corrugation of the MoS2 layer.

Presenters

  • Talat Rahman

    Physics, University of Central Florida

Authors

  • Talat Rahman

    Physics, University of Central Florida

  • Duy Le

    Physics, University of Central Florida