Novel CVD Technique for Producing As-grown 2D Materials-Based Devices with Naturally Formed Contacts

We have developed a new process for creating as-grown, naturally contacted, 2D materials-based devices which is scalable, reproducible, and potentially CMOS compatible with broad implications for basic research and industrial applications. Monolayer films are controllably grown on and around patterned regions of transition metals. Measurements of first generation metal-semiconductor-metal photodiodes, show responsivities on the order of 1 to 10 A/W and a time response on the order of 2 µs, an order of magnitude faster than the best reported result. We will also present the latest results from electrical characterization techniques including 2 and 4-terminal measurements and mobility measurements such as Hall and field-effect. Early results show contact resistances on the order of 0.1 to 1 MΩ●µm and 2D material resistivities on the order of kΩ/square, which are competitive with traditionally made devices. Complex device structures and wafer scale circuits can be envisioned which would be potentially compatible with existing CMOS technology whereby 2D materials-based devices could be grown directly onto silicon wafers and incorporated into the circuitry during either front-end or back-end processing.