High-Mobility CVD-Grown Graphene Device Fabrication with Perfluoropolymers

ORAL

Abstract

The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer—Hyflon—as a transfer handle and to protect the graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO3/SrTiO3 heterostructures is atomically clean, with high mobility (~30,000 cm2V−1s−1) near the Dirac point at 2 K and clear, quantized Hall and magnetoresistance. Local control of the LaAlO3/SrTiO3 interfacial metal-insulator transition—through the graphene—is preserved with this transfer method. The use of perfluoropolymers, such as Hyflon, with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.

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Presenters

  • Jianan Li

    Univ of Pittsburgh, University of Pittsburgh, Department of Physics and Astronomy, University of Pittsburgh

Authors

  • Jianan Li

    Univ of Pittsburgh, University of Pittsburgh, Department of Physics and Astronomy, University of Pittsburgh

  • Jen-Feng Hsu

    Univ of Pittsburgh, University of Pittsburgh, Physics, University of Pittsburgh

  • Hyungwoo Lee

    University of Wisconsin-Madison, Univ of Wisconsin-Madison, University of Wisconsin, University of Wisconsin–Madison, Department of Materials Science and Engineering, University of Wisconsin-Madison, Physics, University of Wisconsin–Madison, Department of Materials Science and Engineering, University of Wisconsin - Madison

  • Shivendra Tripathi

    Univ of Pittsburgh

  • Qing Guo

    Univ of Pittsburgh, Physics, University of Pittsburgh

  • Lu Chen

    Univ of Pittsburgh, University of Pittsburgh, Physics, University of Pittsburgh

  • Mengchen Huang

    Univ of California, Santa Barbara, Department of Physics and Astronomy, University of Pittsburgh, Physics, University of California, Santa Barbara

  • Shonali Dhingra

    Univ of California, Los Angeles

  • Jung-Woo Lee

    Univ of Wisconsin-Madison, University of Wisconsin-Madison, University of Wisconsin, University of Wisconsin–Madison, Physics, University of Wisconsin–Madison, Department of Materials Science and Engineering, University of Wisconsin-Madison

  • Chang-Beom Eom

    University of Wisconsin-Madison, Univ of Wisconsin-Madison, Univ of Wisconsin, Madison, Department of Material Science and Engineering, University of Wisconsin-Madison, Matls Sci & Eng, University of Wisconsin-Madison, University of Wisconsin, Department of Materials Science and Engineering, University of Wisconsin-Madison, University of Wisconsin–Madison, MS&E, University of Wisconsin, Physics, University of Wisconsin–Madison, Department of Materials Science and Engineering, University of Wisconsin - Madison

  • Patrick Irvin

    Univ of Pittsburgh, University of Pittsburgh, Physics and Astronomy, University of Pittsburgh, Department of Physics and Astronomy, Univ of Pittsburgh, Department of Physics and Astronomy, University of Pittsburgh, Physics, University of Pittsburgh, Physics and Astronomy, Univ of Pittsburgh

  • Jeremy Levy

    Univ of Pittsburgh, Physics, Univ of Pittsburgh, University of Pittsburgh, Physics and Astronomy, University of Pittsburgh, Department of Physics and Astronomy, Univ of Pittsburgh, Department of Physics and Astronomy, University of Pittsburgh, Physics, University of Pittsburgh, Physics and Astronomy, Univ of Pittsburgh

  • Brian D'Urso

    Montana State University, Physics, University of Montana