High Mobility from Wet-Transferred Encapsulated CVD Graphene

ORAL

Abstract

High room temperature mobility (μRT) in graphene grown on metals by chemical vapour deposition (CVD) and transferred to arbitrary substrates is necessary to prepare state of the art photonic and optoelectronic devices. We show that encapsulation in hBN, following wet transfer of CVD graphene on SiO2 enables devices with μRT of 60000cm2V-1s-1, at least twice that shown in previous reports using wet transfer [1, 2]. This approach can be extended for the fabrication of heterostructures formed from any CVD layered material.

1W. Gannett, et al., Appl. Phys. Lett. 98, 242105 (2011).
2N. Petrone, et al., Nano Lett. 12, 2751 (2012).

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Presenters

  • Domenico De Fazio

    Cambridge Graphene Centre, University of Cambridge

Authors

  • Domenico De Fazio

    Cambridge Graphene Centre, University of Cambridge

  • David Purdie

    Cambridge Graphene Centre, University of Cambridge

  • Anna Ott

    Cambridge Graphene Centre, University of Cambridge

  • Philipp Braeuninger-Weimer

    Cambridge Graphene Centre, University of Cambridge

  • Stephan Hofmann

    Cambridge Graphene Centre, University of Cambridge, Department of Engineering, Centre for Advanced Photonics and Electronics, JJ Thomson Avenue

  • Ilya Goykhman

    Cambridge Graphene Centre, University of Cambridge

  • Andrea Ferrari

    Univ of Cambridge, Cambridge Graphene Centre, Electrical Engineering, University of Cambridge, Cambridge Graphene Centre, University of Cambridge, Cambridge Graphene Centre, Electrical Engineering, University of cambridge

  • Antonio Lombardo

    Cambridge Graphene Centre, University of Cambridge