High internal Quality factor MBE grown TiN superconducting resonators

Titanium nitride (TiN) has been demonstrated to produce high internal quality (Qi) factor superconducting coplanar waveguide (CPW) resonators. Sputter deposition on a reactive nitrogen passivated silicon wafer and large waveguide features are commonly combined to produce resonators with Qi greater than 1M at low-photon powers.
Here molecular beam epitaxy (MBE) is used to grow TiN directly on silicon (111) and (001) wafers. CPW resonators, with a narrow 6-μm wide center conductor and nominal 500-nm deep trench etch demonstrate low-power Qi over 1M and high-power Qi near 10M. Material growth process and film structure will be discussed.