Electron spin control of ion implanted Si:Bi

Group V donors in silicon are extremely promising candidates for implementation as qubits for quantum technologies due to their long spin coherence lifetimes and existing compatibility within the electronics industry. Bismuth donors are specifically attractive as they exhibit a 20-dimensional nuclear spin Hilbert space and a ground state hyperfine splitting that is resolvable even in the absence of a magnetic field. Incorporation of bismuth on a device scale is now necessary, and low energy ion implantation is currently the only viable method to achieve this. Therefore in this study we explore the fabrication conditions which best produce unperturbed bismuth impurity qubits. Donor bound exciton spectroscopy is used to probe the bismuth zero field hyperfine splitting and determine the relationship between implant density, annealing recipe, and the quality of incorporation. We use high field Hall measurements to infer the nature of observed implant strain and how it can be combated with an appropriate annealing recipe. In the process, we show that optimizing fabrication specifications such as annealing will be crucial to producing quantum devices using bismuth implantation.