Transport Studies of Boron-Doped Diamond/Graphene Heterostructures

ORAL

Abstract

Diamond/graphene heterostructures may enable novel devices that operate at high temperatures. As a first step towards realizing such devices, boron-doped diamond thin films were grown in a microwave plasma-assisted chemical vapor deposition (CVD) system on a tantalum substrate. Mechanical transfer of the diamond films onto graphene grown by CVD on a Si/SiO2 substrate allowed us to fabricate heterostructure devices. We measured the current-voltage characteristics of the devices versus temperature, finding behavior consistent with thermally activated transport over a barrier of ~20 meV. This indicates that the contact barrier between graphene and doped diamond is relatively small. Variations in device behavior with diamond doping are possible, and our latest results will be discussed.

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Presenters

  • Adrian Nosek

    Physics and Astronomy, University of California Riverside

Authors

  • Adrian Nosek

    Physics and Astronomy, University of California Riverside

  • Robert Bogdanowicz

    Metrology and Optoelectronics, Gdansk University of Technology

  • Mateusz Ficek

    Metrology and Optoelectronics, Gdansk University of Technology

  • Michal Sobaszek

    Metrology and Optoelectronics, Gdansk University of Technology

  • Lukasz Golunski

    Metrology and Optoelectronics, Gdansk University of Technology

  • Jakub Karczewski

    Applied Physics and Mathematics, Gdansk University of Technology

  • Andres Jaramillo-Botero

    Materials and Process Simulation Center, California Institute of Technology

  • William Goddard, III

    Materials and Process Simulation Center, California Institute of Technology

  • Marc Bockrath

    Physics, Ohio State University, Ohio State University

  • Tadeusz Ossowski

    Analytical Chemistry, University of Gdansk