Gate controllable spin filteration and spin separation in transition-metal-dichalcogenide monolayers for room temperature applications

ORAL

Abstract

Monolayer transition-metal dichalcogenides (TMDs) are semiconductors with direct gaps at the corners of the hexagonal Brillouin zone. Strong spin-orbit coupling in the absence of inversion symmetry yields spin-split valence bands in the TMDs around the two inequivalent valleys, which are almost fully spin-polarized without requiring magnetic fields. By exploiting these salient features of the electronic states, we propose two spintronics applications based on TMD monolayers, a spin-filter and a spin-separator. We demonstrate the high efficiency (output current with nearly 100% spin-polarization) of our proposed spin-filter/separator through quantum transport computations. Since spin-splitting energies range from 100-500 meV in the TMDs, our spin filter/separator is suitable for room temperature applications.

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Presenters

  • Cheng-Yi Huang

    Academia Sinica

Authors

  • Cheng-Yi Huang

    Academia Sinica

  • Wei-Feng Tsai

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore

  • Mohammad Sadi

    Engineering and Computer Engineering, National University of Singapore

  • Gaurav Gupta

    Engineering and Computer Engineering, National University of Singapore

  • Tay-Rong Chang

    Physics, National Cheng Kung University, National Cheng Kung University, Department of Physics, National Tsing Hua University, Natl Cheng Kung U.

  • Chuang-Han Hsu

    Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, National U. of Singapore

  • Horng-Tay Jeng

    Academia Sinica, Department of Physics, National Tsing Hua University, Natl Tsing Hua Univ, National Tsing Hua University

  • Geng-Chiau Liang

    Engineering and Computer Engineering, National University of Singapore

  • Hsin Lin

    Academia Sinica, National University of Singapore, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Institute of Physics, Academica Sinica, Institute of Physics, Academia Sinica, National U. of Singapore, Natl Univ of Singapore, National University of Signapore

  • Arun Bansil

    Physics, Northeastern University, Department of Physics, Northeastern University, Northeastern University, Physics, Northeastern Univ