High-Impedance Titanium Nitride Resonators via Atomic Layer Deposition

ORAL

Abstract

High-impedance resonators provide the opportunity to achieve ultra-strong coupling in superconducting qubits, strong coupling in hybrid systems, and highly compact multi-modal systems. The use of materials with a large kinetic inductance, like titanium nitride (TiN), allow one to realize high-impedance resonators using thin films. Atomic Layer Deposition (ALD) allows for atomic precision in film thickness on a wafer scale, a necessity for precise device fabrication in thin films. Here we present results of using ALD of TiN to realize thin films (thicknesses ∼ 8 nm) and high-impedance resonators (Zchar ≥ 1kΩ). We will discuss quality factor measurements and other applications of these highly inductive TiN thin films.

–

Presenters

  • Abigail Shearrow

    Univ of Chicago

Authors

  • Abigail Shearrow

    Univ of Chicago

  • Nathan Earnest

    Univ of Chicago, James Franck Institute and Department of Physics, University of Chicago, James Franck Institute, University of Chicago, Physics, University of Chicago

  • Helin Zhang

    Univ of Chicago

  • Samuel Whiteley

    Univ of Chicago, Institute for Molecular Engineering, University of Chicago, University of Chicago

  • Srivatsan Chakram

    Univ of Chicago, James Franck Institute and Department of Physics, University of Chicago, James Franck Institute, University of Chicago, Physics, University of Chicago

  • Erik Shirokoff

    Univ of Chicago

  • David Awschalom

    Univ of Chicago, Institute for Molecular Engineering, University of Chicago, University of Chicago

  • David Schuster

    Univ of Chicago, Physics, Univ of Chicago, James Franck Institute and Department of Physics, University of Chicago, University of Chciago, Physics, University of Chicago, Institute for Molecular Engineering, University of Chicago, University of Chicago, James Franck Institute, University of Chicago