Gate Tunability of Third Harmonic Generation in CVD Graphene

ORAL

Abstract

One of the key features that has driven interest in graphene since its discovery is the ability to control its properties through electrostatic doping. It has been widely established that many optical properties of graphene, such as absorption and Raman scattering, can be tuned by applying a gate voltage to modulate the carrier concentration. We show that the nonlinear third order response of graphene can also be modulated by measuring third harmonic generation spectra in CVD graphene while controlling the doping level using ion gel gating. We measure the magnitude and relative phase change of the third harmonic light and compare our results to theories of the third order optical response in graphene.

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Presenters

  • Steven Drapcho

    Physics, Univ of California - Berkeley

Authors

  • Steven Drapcho

    Physics, Univ of California - Berkeley

  • Hsin-Zon Tsai

    Physics, Univ of California - Berkeley, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley

  • Iqbal Utama

    Physics, Univ of California - Berkeley, University of California at Berkeley, Univ of California - Berkeley, University of California, Berkeley

  • Chan-Shan Yang

    Physics, Univ of California - Berkeley

  • Michael Crommie

    Physics, Univ of California - Berkeley, UC Berkeley and LBNL, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley, Physics, University of California - Berkeley

  • Feng Wang

    Physics, Univ of California - Berkeley, University of California, Berkeley, Univ of California - Berkeley, University of California at Berkeley, UC Berkeley and LBNL