Effects of gate-induced electric fields on semiconductor Majorana nanowires

ORAL

Abstract

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schr\"odinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Land\'e g-factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.

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Presenters

  • Andrey Antipov

    Station Q, Microsoft Research, Santa Barbara, California 93106-6105, USA, Station Q, Microsoft, Microsoft

Authors

  • Andrey Antipov

    Station Q, Microsoft Research, Santa Barbara, California 93106-6105, USA, Station Q, Microsoft, Microsoft

  • Arno Bargerbos

    QuTech, Delft University of Technology, TU Delft

  • Georg W. Winkler

    Station Q, Microsoft Research, Santa Barbara, California 93106-6105, USA, Microsoft Station Q, Microsoft Quantum, Station Q, Microsoft Corp, Microsoft

  • Bela Bauer

    Microsoft Corp., Microsoft, Microsoft Station Q, Station Q, Microsoft, Station Q, Microsoft Research

  • Enrico Rossi

    Physics, William & Mary, Physics, William and Mary, Microsoft

  • Roman Lutchyn

    Station Q, Microsoft Research, Santa Barbara, California 93106-6105, USA, Microsoft Station Q, Microsoft Quantum, Station Q, Microsoft Corp, Station Q, Microsoft, Microsoft