ReS₂ double gate field-effect transistors with h-BN as dielectric layers

Transition metal dichalcogenides (TMDs) are regarded as promising 2-dimensional materials for semiconducting devices and optoelectronic applications. Unlike group VI-TMDs, the rhenium-based dichalcogenides crystallize in a distorted triclinic (1T’) structure due to an extra electron in the d orbital. Because of this structure, the interlayer coupling effect is weaker than other TMDs. Here, we demonstrated electrical characteristics of double gate multilayer ReS₂ FETs, which is passivated with h-BN as gate dielectric layers. The device were measured in double gate mode by sweeping the bottom gate voltage with fixed the top gate bias. The field effect mobilities can be modulated from 26.1 to 40.2 cm²V^-1s^-1. The second peak in transconductance (g_m) of bottom gate sweep is appeared depending on changing top gate potential indicating that conduction path separates in a multilayer system. Also, the threshold voltage shift of the bottom gate depends on the top gate voltage with two linear relationships due to top gate screening effect.