Semiconducting Quantum Computing with Donors

FOCUS · A35

Presentations

  • Modeling dopants in silicon: application to atomic-scale Si qubit systems.

    ORAL

    –

    Presenters

    • Keyi Liu

      Joint Quantum Institute, NIST/University of Maryland, College Park

    Authors

    • Keyi Liu

      Joint Quantum Institute, NIST/University of Maryland, College Park

    • Garnett Bryant

      National Institute of Standards and Technology, University of Maryland, College Park, JQI, NIST, Atomic-Scale Device Group, NIST, NIST

    • Michal Zielinski

      Institute of Physics, Nicolaus Copernicus University, Nicholas Copernicus University

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  • Decoherence of donors in silicon at millikelvin temperatures

    ORAL

    –

    Presenters

    • Patrice Bertet

      Quantronics, SPEC, CEA-Saclay, Quantronics, SPEC, CEA-Saclay, France, Quantronics group, Université Paris-Saclay, CEA-Saclay

    Authors

    • Patrice Bertet

      Quantronics, SPEC, CEA-Saclay, Quantronics, SPEC, CEA-Saclay, France, Quantronics group, Université Paris-Saclay, CEA-Saclay

    • Vishal Ranjan

      Quantronics, SPEC, CEA-Saclay, CEA-Saclay

    • Bartolo Albanese

      Quantronics, SPEC, CEA-Saclay, Quantronics, SPEC, CEA-Saclay, France, CEA-Saclay

    • Sebastian Probst

      Quantronics, SPEC, CEA-Saclay, France, CEA-Saclay

    • Gengli Zhang

      Chinese University of Hong Kong, Physics, The Chinese University of Hong Kong, The Chinese University of HongKong

    • Emmanuel Flurin

      Quantronics, SPEC, CEA-Saclay, Quantronics, CEA Saclay, Quantronics, SPEC, CEA-Saclay, France, CEA-Saclay

    • Denis Vion

      Quantronics, SPEC, CEA-Saclay, Quantronics, SPEC, CEA-Saclay, France, CEA-Saclay

    • Daniel Esteve

      Quantronics, SPEC, CEA-Saclay, Quantronics, SPEC, CEA-Saclay, France, CEA-Saclay

    • Ren-Bao Liu

      Chinese University of Hong Kong, Department of Physics, The Chinese University of Hong Kong, Physics, The Chinese University of Hong Kong, The Chinese University of HongKong

    • John Morton

      University College London, London Centre for Nanotechnology, University College London, UK, London Centre for Nanotechnology, University College London, UCL London

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  • Suppressing spectral diffusion in phosphorus-doped silicon via optical excitation in high magnetic fields

    ORAL

    –

    Presenters

    • Chandrasekhar Ramanathan

      Department of Physics and Astronomy, Dartmouth College, Physics and Astronomy, Dartmouth College

    Authors

    • Lihuang Zhu

      Physics and Astronomy, Dartmouth College

    • Johan Van Tol

      National High Magnetic Field Laboratory, National High Magnetic Field Laboratory, Florida State University, National High Magnetic Field Lab

    • Chandrasekhar Ramanathan

      Department of Physics and Astronomy, Dartmouth College, Physics and Astronomy, Dartmouth College

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  • Machine Learning approach to the inverse problem in STM imaging of dopant-based quantum devices

    ORAL

    –

    Presenters

    • Piotr T. R�?a?ski

      Institute of Physics, Nicolaus Copernicus University

    Authors

    • Piotr T. R�?a?ski

      Institute of Physics, Nicolaus Copernicus University

    • Martyna Patera

      Institute of Physics, Nicolaus Copernicus University

    • Garnett Bryant

      National Institute of Standards and Technology, University of Maryland, College Park, JQI, NIST, Atomic-Scale Device Group, NIST, NIST

    • Michal Zielinski

      Institute of Physics, Nicolaus Copernicus University, Nicholas Copernicus University

    View abstract →

  • Fabrication of Single Donor and Single Electron Transistors for Quantum Technologies

    ORAL

    –

    Presenters

    • Rick Silver

      Nanoscale Device Characterization Division, National Institute of Standards and Technology, National Institute of Standards and Technology

    Authors

    • Rick Silver

      Nanoscale Device Characterization Division, National Institute of Standards and Technology, National Institute of Standards and Technology

    • Ranjit Kashid

      National Institute of Standards and Technology

    • Xiqiao Wang

      National Institute of Standards and Technology

    • Jonathan Wyrick

      National Institute of Standards and Technology, Atom Scale Device Group, Nanoscale Device Characterization Division, National Institute of Standards and Technology

    • Pradeep Namboodiri

      National Institute of Standards and Technology, Atom Scale Device Group, Nanoscale Device Characterization Division, National Institute of Standards and Technology

    • Scott W Schmucker

      National Institute of Standards and Technology

    • Andrew J Murphy

      National Institute of Standards and Technology

    • Michael David Stewart

      National Institute of Standards and Technology

    • Neil Zimmerman

      National Institute of Standards and Technology

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  • Investigating the impact of laser illumination upon coherence times of electron spin qubits bound to donors in silicon

    ORAL

    –

    Presenters

    • David Wise

      London Centre for Nanotechnology, University College London

    Authors

    • David Wise

      London Centre for Nanotechnology, University College London

    • Naitik Panjwani

      London Centre for Nanotechnology, University College London

    • Siddharth Dhomkar

      University College London, City College of New York, London Centre for Nanotechnology, University College London

    • John Morton

      University College London, London Centre for Nanotechnology, University College London, UK, London Centre for Nanotechnology, University College London, UCL London

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  • Electronic transport along atomically placed P ribbons in Si

    ORAL

    –

    Presenters

    • Belita Koiller

      Universidade Federal do Rio de Janeiro, Brazil

    Authors

    • Belita Koiller

      Universidade Federal do Rio de Janeiro, Brazil

    • Amintor Dusko

      Universidade Federal Fluminense, Brazil

    • Caio Lewenkopf

      Instituto de Física, Universidade Federal Fluminense, Universidade Federal Fluminense, Brazil

    View abstract →