Embedded quantum dots in (Ga, Al)As semiconductor nanostructure: structural study of current tunneling

We report the tunneling current behavior in a nano-semiconductor structure of (Ga, Al) As / GaAs, which contains the Rashba spin orbital interaction in the presence of embedded InAs quantum dots of different geometries (lens, pyramid and ring) depending on the voltage, magnetic field, and different spin-orbit interaction values K_gL=π/4, π/2, 3π/4. These results show that the intensity of the current presents appreciable changes when the morphology of the quantum dot changes and also when the intensity of the bias voltage and magnetic field increase. For voltages less than or equal to 0.2 V and considering spin up we observed the appearance of the first peaks of current intensity according to the morphology of the following way: Pyramid, lens and ring. However, when the voltage is greater than 0.2 V a change in the current occurs due to the morphology of the quantum dots changing in its order: Ring, lens and pyramid. This phenomenon also occurs when the spin orbit coupling is changed, showing that as the value of the phase increases, a change in the domain of the morphology for similar voltages also occurs.