Electrically Detected Magnetic Resonance in Silicon Nitride Thin Films of Widely Varying Stoichiometries

We utilize electrically detected magnetic resonance (EDMR) to identify defects responsible for electronic transport in thin films of silicon nitride. The EDMR response is detected via spin dependent trap assisted tunneling over a range of electric fields. The EDMR measurements are made at both high and low field/frequency combinations. These EDMR measurements are compared with near-zero field magnetoresistance (NZFMR) measurements in which no oscillating magnetic field is applied; we observe an NZFMR response related to the EDMR. A comparison between the EDMR and NZFMR allows us to draw conclusions with regard to the relative analytical power of NZFMR versus EDMR as well as aid in the development of the physical understanding of the NZFMR response.