Voltage control of magnetic anisotropy of a FePt/MgO(001) hetrostructure

Control of magnetic properties by an external electric field can be a potential candidate to overcome the limitation of high-power consumption for non-volatile magnetoelectric random access memory (MeRAM). We predict a huge voltage control magnetic anisotropy (VCMA) coefficient »1.77 (-1.36) pJ/(V.m) of the Fe(Pt)-interfaced FePt/MgO hetrostructure. The Fe-interfaced FePt/MgO film exhibits strain-induced magnetization reorientation instigated through second order magnetoelastic coupling along with extremely sensitive VCMA behavior.We anticipate a significant effect of the external field on the induced electric dipole that is formed in terms of charge accumulation or depletion at the metal/dielectric interface. These results are a step forward to achieve a full potential of MeRAM with write voltage below 1 V and switching bit energy below 1 fJ.