Observation of Phase-transition-induced magnetism modulation in metal/VO2 heterostructures
ORAL
Abstract
High efficiency manipulation of magnetic properties is of great interest for fundamental science and applications. However, facile strategies with more modulating freedom are are still highly desired. In this work, NiFe (easy axis in-plane) and Co/Pt multilayers (easy axis out-of-plane) are combined with a strongly correlated electron systems VO2 to fabricate newly artificial metal/oxide heterostructures. [1, 2] It endows the spintronic material with extraordinary multiple control ability of magnetism (e.g., anisotropy, magnetization, etc.) via light or temperature change based on the interfacial strain coupling. Utilizing its multiple modulation feature, a phase-transition anisotropic magnetoresistance (PTAMR) device is fabricated. The special features which distinguish from traditional materials can further benefit the emerging device applications. Our work, as an example of phase-transition spintronics, can certainly pave the way for next-generation electronics.
1) Guodong Wei, Xiaoyang Lin et al. arXiv: 1805.02453.
2) Guodong Wei, Xiaoyang Lin et al. arXiv: 1809.06999.
1) Guodong Wei, Xiaoyang Lin et al. arXiv: 1805.02453.
2) Guodong Wei, Xiaoyang Lin et al. arXiv: 1809.06999.
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Presenters
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Guodong Wei
Beihang University
Authors
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Guodong Wei
Beihang University
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Xiaoyang Lin
Beihang University
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Zhizhong Si
Beihang University
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Xinhe Wang
Beihang University
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Kai Liu
Tsinghua University
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Kaili Jiang
Tsinghua University
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Yanxue Chen
Shandong University
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Stephane Mangin
University of Lorraine, Institut Jean Lamour, UMR 7198,CNRS-Nancy Université
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Weisheng Zhao
Beihang University, Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Xueyuan Road 37, Beijing 100191, China