Antiferromagnetic Mn3NiN thin films supporting giant piezomagnetism
ORAL
Abstract
Controlling magnetism with electric field directly or through strain-driven piezoelectric coupling remains a key goal of spintronics. Here we demonstrate that giant piezomagnetism, a linear magneto-mechanic coupling effect, is manifest in antiperovskite Mn3NiN, facilitated by its geometrically frustrated antiferromagnetism opening the possibility of new memory device concepts. Films of Mn3NiN with intrinsic biaxial strains of 0.25% result in Néel transition shifts up to 60K and magnetisation changes consistent with theory [1]. Films grown on BaTiO3 display a striking magnetisation jump in response to uniaxial strain from the intrinsic BaTiO3 structural transition, with an inferred 44% strain coupling efficiency and a magnetoelectric coefficient approximately a 1000-fold increase over Cr2O3 as predicted previously by theory. Overall our observations pave the way for further research into the broader family of Mn-based antiperovskites where yet larger piezomagnetic effects are predicted to occur at room temperature [2]. In this talk we will review progress towards application of thin film piezomagnetism in Mn3NiN.
[1] J. Zemen et al., Phys Rev B 96, 024451 (2017) [2] D. Boldrin et al., ASC Appl. Mater. Interfaces 10 18863 (2018)
[1] J. Zemen et al., Phys Rev B 96, 024451 (2017) [2] D. Boldrin et al., ASC Appl. Mater. Interfaces 10 18863 (2018)
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Presenters
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Lesley Cohen
Physics, Imperial College London, Blackett Laboratory, Imperial College London
Authors
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David Boldrin
Blackett Laboratory, Imperial College London
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Andrei Mihai
Department of Materials, Imperial College London
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Bin Zou
Department of Materials, Imperial College London
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Jan Zemen
Faculty of Electrical Engineering, Czech Technical University in Prague
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Lesley Cohen
Physics, Imperial College London, Blackett Laboratory, Imperial College London