Thermoelectric Effects in a Double Mushroom Phase Change Memory Cell
ORAL
Abstract
Phase change memory (PCM) is a non-volatile memory that uses crystalline (set) and amorphous (reset) states to hold information. We use a finite-element PCM model1,2 to demonstrate thermoelectric effects in a cell with a novel “double mushroom” geometry. We analyze the impact of thermoelectric power (Peltier and Thomson heating) on device performance. We also compare the double and single mushroom cell write (reset and set) requirements and find better performance in the double mushroom due to enhanced thermal isolation.
1 Z. Woods and A. Gokirmak, IEEE Trans. Electron Devices 64, 4466 (2017).
2 Z. Woods, S. Jake, C. Adam, A. L’Hacene, and A. Gokirmak, IEEE Trans. Electron Devices 64, 4472 (2017).
1 Z. Woods and A. Gokirmak, IEEE Trans. Electron Devices 64, 4466 (2017).
2 Z. Woods, S. Jake, C. Adam, A. L’Hacene, and A. Gokirmak, IEEE Trans. Electron Devices 64, 4472 (2017).
–
Presenters
-
Noah Del Coro
Electrical Engineering and Computer Science and Engineering, University of Connecticut
Authors
-
Noah Del Coro
Electrical Engineering and Computer Science and Engineering, University of Connecticut
-
Jake Scoggin
University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut
-
Ali Gokirmak
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA, University of Connecticut, ECE, UConn, Electrical and Computer Engineering, University of Connecticut