Complex chalcogenides as highly-polarizable semiconductors
ORAL
Abstract
We will report theoretical and experimental progress towards establishing the fundamentals of highly-polarizable complex chalcogenide semiconductors. We use computational thermodynamics to predict the phase diagrams for select materials, highlighting windows of equilibrium between solid and vapor phases – relevant to growing films by molecular beam epitaxy (MBE). We then report on progress towards MBE growth of complex chalcogenide films, focusing on control of H2S and H2Se gas precursors. We will also report experimental results on complex chalcogenides in the Ba-Zr-S system, including time-resolved photoluminescence suggesting slow minority carrier recombination, and impedance spectroscopy providing evidence of highly-polarizable materials with band gap below 2 eV.
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Presenters
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Rafael Jaramillo
Massachusetts Institute of Technology, Department of Materials Science and Engineering, Massachusetts Institute of Technology
Authors
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Stephen Filippone
Massachusetts Institute of Technology
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Shanyuan Niu
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Department of Chemical Engineering and Materials Science, University of Southern California
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Kristopher Williams
Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts Institute of Technology
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William A Tisdale
Chemical Engineering, Massachusetts Institute of Technology (MIT), Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts Institute of Technology
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Yi-Yang Sun
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences
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Jayakanth Ravichandran
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Department of Chemical Engineering and Materials Science, University of Southern California
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Rafael Jaramillo
Massachusetts Institute of Technology, Department of Materials Science and Engineering, Massachusetts Institute of Technology