Defects in Semiconductors -- Device Materials

FOCUS · B11

Presentations

  • The Near-Surface Electrostatic Environment of n-Doped Silicon Probed with a Moveable Dangling Bond Point Probe

    ORAL

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    Presenters

    • Taleana Huff

      Physics, University of Alberta

    Authors

    • Taleana Huff

      Physics, University of Alberta

    • Thomas Dienel

      Physics, University of Alberta

    • Mohammad Rashidi

      University of Alberta, Physics, University of Alberta

    • Roshan Achal

      University of Alberta, Physics, University of Alberta

    • wyatt vine

      Physics, University of Alberta

    • Robert A Wolkow

      University of Alberta, Physics, University of Alberta

    View abstract →

  • Hyperdoping silicon for intermediate band photoconductivity

    ORAL

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    Presenters

    • Yining Liu

      Department of Electro-Optics and Photonics, University of Dayton

    Authors

    • Yining Liu

      Department of Electro-Optics and Photonics, University of Dayton

    • Shao Qi Lim

      Research School of Physics and Engineering, Australia National University

    • Wenjie Yang

      Research School of Physics and Engineering, Australia National University

    • Phillippe K Chow

      US Army ARDEC-Benet Labs

    • Imad Agha

      Department of Physics, University of Dayton

    • James S Williams

      Research School of Physics and Engineering, Australia National University

    • Jeffrey M Warrender

      US Army ARDEC-Benet Labs

    • Jay Mathews

      Department of Physics, University of Dayton

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  • The evolution of atomic structure and chemical states of ultra-low energy high-dose Boron implanted Si via UV laser annealing

    ORAL

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    Presenters

    • Kuang Yao Lo

      National Cheng Kung University, Physics, National Cheng Kung University, Taiwan

    Authors

    • Kuang Yao Lo

      National Cheng Kung University, Physics, National Cheng Kung University, Taiwan

    • Fu-Ying Lee

      Physics, National Cheng Kung University, Taiwan

    • Zong-Zhe Wu

      National Cheng Kung University, Physics, National Cheng Kung University, Taiwan

    • Li-Chi Kao

      Physics, National Cheng Kung University, Taiwan

    • Feng-Ming Chang

      National Cheng Kung University, Physics, National Cheng Kung University, Taiwan

    • Yu-Ming Chang

      National Taiwan University, Center for Condensed Matter Sciences, National Taiwan University, Center for Condensed Matter Sciences, National Taiwan University, Taiwan

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  • Defect studies in Ge and GeSn thin films grown on Si

    ORAL

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    Presenters

    • Christina Scott

      Department of Physics, University of Dayton

    Authors

    • Christina Scott

      Department of Physics, University of Dayton

    • Imad Agha

      Department of Physics, University of Dayton

    • Jay Mathews

      Department of Physics, University of Dayton

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  • Crystal growth, electronic structure and optical properties of BaZrS<sub>3</sub> and its Ruddlesden-Popper phases

    ORAL

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    Presenters

    • Shanyuan Niu

      Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Department of Chemical Engineering and Materials Science, University of Southern California

    Authors

    • Shanyuan Niu

      Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Department of Chemical Engineering and Materials Science, University of Southern California

    • Kristopher Williams

      Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts Institute of Technology

    • Wei Li

      Department of Materials Science and Engineering, University of Delaware

    • Debarghya Sarkar

      Ming Hsieh Department of Electrical Engineering, University of Southern California

    • Fei Hou

      School of Materials Science and Engineering, University of New South Wales

    • Boyang Zhao

      Mork Family Department of Chemical Engineering and Materials Science, University of Southern California

    • Kevin Ye

      Department of Materials Science and Engineering, Massachusetts Institute of Technology

    • Elisabeth Bianco

      Materials and Manufacturing Directorate, Air Force Research Laboratory

    • Michael E McConney

      Materials and Manufacturing Directorate, Air Force Research Laboratory

    • Ralf Haiges

      Loker Hydrocarbon Research Institute and Department of Chemistry, University of Southern California

    • David Singh

      University of Missouri, Physics, University of Missouri, University of Missouri-Columbia, University of missouri, Department of Physics and Astronomy, University of Missouri

    • Jan Seidel

      School of Materials Science and Engineering, University of New South Wales

    • Rafael Jaramillo

      Massachusetts Institute of Technology, Department of Materials Science and Engineering, Massachusetts Institute of Technology

    • Rehan Kapadia

      Ming Hsieh Department of Electrical Engineering, University of Southern California

    • William A Tisdale

      Chemical Engineering, Massachusetts Institute of Technology (MIT), Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts Institute of Technology

    • Anderson Janotti

      Department of Material science and Engineering, University of Delaware, Department of Physics & Astronomy, University of Delaware, Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware

    • Jayakanth Ravichandran

      Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Department of Chemical Engineering and Materials Science, University of Southern California

    View abstract →

  • Point defects and dopants of boron arsenide from first-principles calculations: donor compensation and doping asymmetry

    ORAL

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    Presenters

    • Sieun Chae

      University of Michigan

    Authors

    • Sieun Chae

      University of Michigan

    • Kelsey Mengle

      Materials Science and Engineering, University of Michigan, University of Michigan

    • John Heron

      Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, University of Michigan

    • Emmanouil Kioupakis

      University of Michigan, Materials Science and Engineering, University of Michigan, Material Science and Engineering, University of Michigan, Ann Arbor

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  • Effect of substitutional defects on the thermal conductivity of boron arsenide

    ORAL

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    Presenters

    • Nakib Protik

      Physics, Boston College

    Authors

    • Nakib Protik

      Physics, Boston College

    • Mauro Fava

      LITEN, CEA-Grenoble

    • Natalio Mingo

      LITEN, CEA-Grenoble

    • Jesús Carrete

      Institute of Materials Chemistry, Technical University of Vienna

    • Georg Madsen

      Institute of Materials Chemistry, Technical University of Vienna

    • Navaneetha Krishnan Ravichandran

      Physics, Boston College

    • David A Broido

      Boston College, Boston Coll, Physics, Boston College

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  • Beyond diffusion limit defect imaging and independent determination of the spatial profiles of electron and hole density near a dislocation defect by combining Raman and photoluminescence (PL) imaging

    ORAL

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    Presenters

    • Yong Zhang

      University of North Carolina at Charlotte

    Authors

    • Chang-Kui Hu

      University of North Carolina at Charlotte and Wuhan University of Technology, Wuhan University of Technology

    • Qiong Chen

      University of North Carolina at Charlotte

    • Fengxiang chen

      University of North Carolina at Charlotte and Wuhan University of Technology

    • Timothy Hurley Gfroerer

      Davidson College

    • Mark W Wanlass

      National Renewable Energy Laboratory

    • Yong Zhang

      University of North Carolina at Charlotte

    View abstract →