Magnetic properties of vanadium selenide epitaxial thin films

ORAL

Abstract

The discoveries of ferromagnetism in atomically-thin Cr2Ge2Te6 and CrI3 crystals have opened up an opportunity for integration of magnetic 2D materials into van der Waals heterostructures. Moreover, the recent discovery of emergent room-temperature ferromagnetism in monolayer VSe2 [1], which has been known as a paramagnetic metal in its bulk form, should provide an important step toward spintronics applications based on 2D materials, although the existence of ferromagnetism in monolayer VSe2 is still controversial [2]. We have recently found that vanadium selenide epitaxial thin films fabricated by molecular-beam epitaxy (MBE) with our growth recipe [3] exhibit peculiar magnetic properties with clear anomalous Hall effect down to 2D limit. In this presentation, we will show transport properties of our MBE-grown vanadium selenide epitaxial thin films, and discuss possible origins of this emergent ferromagnetism in our samples. [1] M. Bonilla, et. al., Nat. Nanotechnol. 13, 289 (2018). [2] J. Feng, et. al., Nano Lett. 18, 4493 (2018). [3] M. Nakano, et. al., Nano Lett. 17, 5595 (2017).

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Presenters

  • Masaki Nakano

    Department of Applied Physics, The University of Tokyo, University of Tokyo

Authors

  • Masaki Nakano

    Department of Applied Physics, The University of Tokyo, University of Tokyo

  • Satoshi Yoshida

    Department of Applied Physics, The University of Tokyo

  • Saeed Bahramy

    The University of Tokyo, Department of Applied Physics, The University of Tokyo

  • Yue Wang

    Department of Applied Physics, The University of Tokyo

  • Hideki Matsuoka

    Department of Applied Physics, The University of Tokyo, University of Tokyo

  • Yuki Majima

    Department of Applied Physics, The University of Tokyo

  • Yoshimitsu Kohama

    ISSP, Tokyo University, The Institute for Solid State Physics, University of Tokyo, Institute for Solid State Physics, University of Tokyo, The Institute for Solid State Physics, The University of Tokyo

  • Yuta Ohigashi

    Department of Applied Physics, The University of Tokyo

  • Yuta Kashiwabara

    Department of Applied Physics, The University of Tokyo

  • Masato Sakano

    The University of Tokyo, Department of Applied Physics, The University of Tokyo

  • Kyoko Ishizaka

    The University of Tokyo, Department of Applied Physics, The University of Tokyo

  • Yoshihiro Iwasa

    Department of Applied Physics, The University of Tokyo, University of Tokyo, Department of applied physics, University of Tokyo, Department of Applied Physics, University of Tokyo, Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo