Electroplated Rhenium - A new high-enough Tc material8

ORAL

Abstract

We show that Re films, which normally have Tc in the range of 1.8-3 K, have a superconducting critical temperature of approximately 6 K when electroplated from aqueous solutions. Since these solutions are compatible with standard manufacturing processes and and Re is insoluble with many noble metals, this allows for integration of superconducting Re cores into, e.g., Au, Cu, and Ni multilayers. These superconducting multilayers can be usend a wide range of standard components for 4 K and below electronics, connectorized using either soldering or wirebonding. We find that potassium-based solutions result in films with high hydrogen content that evidence of stress above 150 nm thickness, while the Li-based solutions result in films stable to at least 600 nm. Magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper critical field of 2.5 T. Critical current densities on the order of 108 A/m2, comparable to Nb, were measured at liquid-helium temperature. Low-loss at RF was obtained for films on resonators made with Cu traces on commercial circuit boards. The relation between superconductivity and nano-structure will be investigated using x-ray diffraction and transmission electron microscopy.

Presenters

  • David Pappas

    National Institute of Standards and Technology (NIST), Boulder, Quantum Devices, NIST-Boulder, National Institute of Standards and Technology Boulder, NIST, Boulder, Colorado, National Institute of Standards and Technology, Boulder

Authors

  • David Pappas

    National Institute of Standards and Technology (NIST), Boulder, Quantum Devices, NIST-Boulder, National Institute of Standards and Technology Boulder, NIST, Boulder, Colorado, National Institute of Standards and Technology, Boulder

  • Russell Lake

    National Institute of Standards and Technology (NIST), Boulder, Boulder, NIST, National Institute of Standards and Technology Boulder, National Institute of Standards and Technology, Boulder

  • Mustafa Bal

    Quantum Devices, NIST-Boulder, National Institute of Standards and Technology Boulder, National Institute of Standards and Technology, Boulder

  • Corey Rae McRae

    National Institute of Standards and Technology Boulder, National Institute of Standards and Technology, Boulder

  • Ronald B Goldfarb

    National Institute of Standards and Technology Boulder

  • Donald David

    CIRES, University of Colorado

  • Junling Long

    National Institute of Standards and Technology Boulder, National Institute of Standards and Technology, Boulder

  • Britton L Plourde

    Physics, Syracuse University, Syracuse University, Syracuse Univ, Department of Physics, Syracuse University

  • Eunja Kim

    Department of Physics and Astronomy, University of Nevada, Las Vegas, Department of Physics, University of Nevada Las Vegas

  • Dustin A Hite

    NIST, Boulder, Colorado, National Institute of Standards and Technology Boulder

  • Lee Pappas

    CIRES, University of Colorado

  • Ilke Arslan

    Center for Nanoscale Materials, Argonne National Laboratory, Argonne National Laboratory

  • Xian Wu

    Physical and Life Sciences Directorate, Lwarence Livermore National Laboratory, National Institute of Standards and Technology, Boulder, National Institute of Standards and Technology Boulder, Lawrence Livermore National Laboratory

  • qiang huang

    Department of Chemical and Biological Engineering, University of Alabama

  • Hsiang-Sheng Ku

    National Institute of Standards and Technology Boulder, National Institute of Standards and Technology, Boulder, Alibaba

  • Alexana Roshko

    National Institute of Standards and Technology Boulder

  • Jianguo Wen

    Center for Nanoscale Materials, Argonne National Laboratory, Argonne National Laboratory