scanning tunneling microscopy of defects in SnS₂

We present our room- temperature scanning tunneling microscopy measurements of SnS₂, a quasi-two dimensional layered semiconductor. SnS₂ is a material of interest due to its high carrier mobility and its potential use in applications including in photonics, electronics, and solar energy conversion. Understanding the surface properties of SnS₂ are particularly important for its incorporation and optimization in applications. Here we present our surface characterization of SnS₂ and detail several surface features including surface/subsurface defects which locally distort the crystal lattice.