Resonator Cavities Compatible with Epitaxial InAs-Al Heterostructures
ORAL
Abstract
“gatemon” where the Josephson energy can be tuned in-situ with an applied electric field to an InAs Josephson junction, eliminating the need for flux tuning in superconducting qubits [1]. Here we have characterized microwave cavities needed for coupling to superconducting gatemon qubits. We present resonator quality factors for a fixed design on various levels of the buffer layers used as substrates. We make a comparison to bare InP and Si to establish a comparative baseline.
[1] Larsen et al., Phys. Rev. Lett. 115, 127001 (2015).
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Presenters
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Joseph Yuan
Department of Physics, New York University, Physics, New York University, Center for Quantum Phenomena, Department of Physics, New York University
Authors
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Joseph Yuan
Department of Physics, New York University, Physics, New York University, Center for Quantum Phenomena, Department of Physics, New York University
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Matthieu Dartiailh
Physics, New York University, Center for Quantum Phenomena, Department of Physics, New York University, Laboratoire Pierre Aigrain UMR 8551, Ecole normale Supérieure - PSL Research university, CNRS, Université Pierre et Marie Curie - Sorbonne Universités, Université Paris Dider
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William Andrew Mayer
Department of Physics, New York University, Physics, New York University, Center for Quantum Phenomena, Department of Physics, New York University
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Eric Song
Physics, New York University
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Kaushini Wickramasinghe
University of Oklahoma, Department of Physics, New York University, Physics, New York University, Physics, University of Maryland, College Park, Center for Quantum Phenomena, Department of Physics, New York University, University of Maryland, College Park
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Javad Shabani
Department of Physics, New York University, Physics, New York University, Center for Quantum Phenomena, Department of Physics, New York University, Center for Quantum Phenomena, New York University, New York University, Physics, Harvard University