Enhancement of the Spin-Orbit Coupling in Silicon by Bismuth Doping
ORAL
Abstract
Si possesses a low spin-orbit coupling, it allows a long spin lifetime but limits new device-designing possibilities in spintronics, particularly with the spin-charge conversion effects to create an all-Si spin devices. The purpose of this study is to create a sizable spin-orbit interaction in Si by implantation of a heavy element, bismuth (Bi).
To compare the spin-orbit coupling strength in the Si channel with and without Bi doping (SOI:P:B and SOI:P, respectively), we measured quantum corrections to the conductance in function of temperature. The elastic diffusion length (Le), the spin-orbit coupling length (Lso) and the phase coherence length (Lφ) can be extracted from the magnetoconductance data by using the Hikami-Larkin-Nagaoka model. Le has the same order of magnitude (10 nm-25 nm) for both samples, however Lφ decreased after the Bi doping (with the strongest decrease from 177 nm to 35 nm at 2 K). In the case of SOI:P:Bi, the Bi doping induced a spin-orbit coupling length of the same order of magnitude with the phase coherence length (Lso= 54 nm and Lφ= 35 nm at 2K).
The increased spin-orbit coupling strength led to observe the crossover between the WL and the WAL. These results demonstrate a control over the strength of the spin-orbit coupling in Si channel using Bi doping.
To compare the spin-orbit coupling strength in the Si channel with and without Bi doping (SOI:P:B and SOI:P, respectively), we measured quantum corrections to the conductance in function of temperature. The elastic diffusion length (Le), the spin-orbit coupling length (Lso) and the phase coherence length (Lφ) can be extracted from the magnetoconductance data by using the Hikami-Larkin-Nagaoka model. Le has the same order of magnitude (10 nm-25 nm) for both samples, however Lφ decreased after the Bi doping (with the strongest decrease from 177 nm to 35 nm at 2 K). In the case of SOI:P:Bi, the Bi doping induced a spin-orbit coupling length of the same order of magnitude with the phase coherence length (Lso= 54 nm and Lφ= 35 nm at 2K).
The increased spin-orbit coupling strength led to observe the crossover between the WL and the WAL. These results demonstrate a control over the strength of the spin-orbit coupling in Si channel using Bi doping.
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Presenters
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Fabien Rortais
Kyoto University
Authors
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Fabien Rortais
Kyoto University
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SOOBEOM LEE
Department of Electronic Science and Engineering, Kyoto University, Kyoto University
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Ryo Ohshima
Department of Electronic Science and Engineering, Kyoto University, Kyoto University
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Sergey Dushenko
Kyoto University, University of Maryland, College Park/National Institute of Standards and Technology
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Yuichiro Ando
Department of Electronic Science and Engineering, Kyoto University, Kyoto University
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Masashi Shiraishi
Department of Electronic Science and Engineering, Kyoto University, Kyoto University