Interaction of Two-Dimensional Transition Metal Dichalcogenides on Different Substrates and Nanostructures

Two-dimensional transition metal dichalcogenides (2D TMDs) are 2D semiconductors that hold promise for a variety of optoelectronic devices, especially by harnessing the valley degree of freedom. Growth of 2D TMDs on different substrates and nanostructures provides enormous opportunities in engineering ultra-thin devices with tailored optical emission properties. We characterize the optical differences when the 2D TMD molybdenum disulfide (MoS₂) is grown via chemical vapor deposition on the substrates silicon dioxide on silicon, gallium nitride (GaN), and silicon carbide (SiC). Changes in the spacing and relative intensity of the E¹_2g and A_1g Raman peaks suggest differences in the microstructure of the grown MoS₂ or its interaction with the substrate. Additionally, we characterize the interaction between MoS₂ and optical cavities patterned onto GaN and SiC. Preliminary results show brighter MoS₂ exciton photoluminescence and shifted emission peaks on the optical cavities compared to the bulk substrate of each. We also show first results attempting to couple MoS₂ emission to the resonant modes of these optical cavities.