Non-Linear transport in low density 2D hole systems

ORAL

Abstract

We report measurements of non-linear magnetotransport in 10 nm wide p-doped GaAs/Al0.1Ga0.9As quantum wells with low hole density (n ~ 1010 cm-2) and high mobility (m ≈ 5 x 105 cm2/Vs). The Quantum Hall plateau-to-plateau transitions exhibit a universal dependence on bias voltage. We compare the results to theoretical predictions by assuming that the narrowing of the plateaus is caused by the temperature rise in the sample caused by the Joule heating. We find a good qualitative agreement with the predictions, but, surprisingly, the data show a stronger dependence on bias in the zero-bias limit than the theory suggests. We also discuss the high-frequency rectification spectroscopy as an approach for exploring dynamic effects in low-density hole systems and, in particular, the physics of insulating phases in two-dimensional transport at low carrier densities.

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Presenters

  • Dmitrii Kruglov

    Physics, University of Cincinnati

Authors

  • Dmitrii Kruglov

    Physics, University of Cincinnati

  • Andrei Kogan

    Physics, University of Cincinnati

  • Chieh-Wen Liu

    Physics, Case Western Reserve University

  • Xuan Gao

    Case Western Reserve University, Physics, Case Western Reserve University

  • Loren Pfeiffer

    Electrical Engineering, Princeton University, Princeton University, Princeton Univ, Department of Electrical Engineering, Princeton University, PRISM, Princeton University, Physics, Princeton University, Electrical Engineering, Princeton

  • Kenneth West

    Electrical Engineering, Princeton University, Princeton University, Princeton Univ, Department of Electrical Engineering, Princeton University, PRISM, Princeton University, Physics, University of Pittsburgh, Electrical Engineering, Princeton