Magnetoresistance at the 2D MIT: Evidence of Micro-emulsion Phases
ORAL
Abstract
Measurements of the in-plane magnetic field Bsat required to achieve full polarization of the electron spins in the strongly interacting two-dimensional electron system in a silicon MOSFET (Metal-Oxide-Semiconductor-Field-Effect Transistor) reveal the occurrence of a phase transition at a well-defined critical electron density for the metal-insulator transition determined from resistivity measurements. The behavior of Bsat as a function of electron density is consistent with the presence of a mixed, electronic micro-emulsion phase proposed by Spivak and Kivelson [1].
[1] B. Spivak, Phys. Rev. B 67, 125205 (2003); B. Spivak and S. A. Kivelson, PRB 70 155114 (2004); Annals of Phys. 321, 2071-2115 (2006).
[1] B. Spivak, Phys. Rev. B 67, 125205 (2003); B. Spivak and S. A. Kivelson, PRB 70 155114 (2004); Annals of Phys. 321, 2071-2115 (2006).
–
Presenters
-
Shiqi Li
City College of New York of CUNY, Physics, City College of New York
Authors
-
Shiqi Li
City College of New York of CUNY, Physics, City College of New York
-
Qing Zhang
City College of New York of CUNY, Physics, City College of New York
-
Pouyan Ghaemi
City College of New York, Physics, City College of New York
-
Myriam Sarachik
City College of New York of CUNY, Physics, City College of New York