Doping Dependence of Charge Density Wave in Bi-2212 Cuprate Superconductors

ORAL

Abstract

The origin of the charge density wave (CDW) in high-temperature superconductor, its interplay with superconductivity, and more importantly, to which extent it influences lattice and charge degrees of freedom remain an active area of research. To gain further insights into these questions, it is necessary to characterize its doping and temperature dependence. We performed high energy resolution momentum-resolved resonant inelastic soft x-ray scattering (RIXS) experiments at the Cu L3-edge on the high-temperature superconductor Bi2Sr2CaCu2O8+x with the doping level across the entire phase diagram (Antiferromagnetic, underdoped, optimally doped, and overdoped). Doping dependence of the CDW, the associated phonon softening, and excitations will be discussed.

–

Presenters

  • Haiyu Lu

    SIMES, SLAC National Accelerator Lab, SLAC National Accelerator Laboratory

Authors

  • Haiyu Lu

    SIMES, SLAC National Accelerator Lab, SLAC National Accelerator Laboratory

  • Matthias Hepting

    SLAC National Accelerator Laboratory, SIMES, SLAC National Accelerator Lab, Max Planck Institute Stuttgart

  • Makoto Hashimoto

    SLAC, SLAC national accelerator laboratory, SLAC National Accelerator Laboratory, Stanford University, SSRL, SLAC

  • Yu He

    Stanford University, SLAC National Accelerator Laboratory, Applied physics, Stanford University, Department of Applied Physics, Stanford University

  • Sudi Chen

    Stanford University, SLAC National Accelerator Laboratory, Applied physics, Stanford University

  • Kejun Xu

    Stanford University, SLAC National Accelerator Laboratory, Applied physics, Stanford University

  • Shigeyuki Ishida

    National Institute of Advanced Industrial Science and Technology, National Institute of Advanced Industrial Science and Technology), AIST

  • Yoshiyuki Yoshida

    AIST, National Institute of Advanced Industrial Science and Technology), National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, National Institute of Advanced Industrial Science and Technology

  • Hiroshi Eisaki

    National Institute of Advanced Industrial Science and Technology, AIST, National Inst. Adv. Industrial Science & Technology, Tsukuba, National Institute of Advanced Industrial Science and Technology), Electronics and Photonics Research Institute National Institute of Advanced Industrial Science and Technology, Japan

  • Riccardo Arpaia

    Chalmers University of Technology

  • Giacomo Ghiringhelli

    Politecnico di Milano, Dipartimento di Fisica, Politecnico di Milano

  • Lucio Braicovich

    Politecnico di Milano

  • Brian Moritz

    Stanford University, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, SLAC National Accelerator Laboratory, SLAC and Stanford University, Institute for Materials and Energy Science, Stanford, SSRL Materials Science Division, SLAC National Accelerator Laboratory and Stanford University

  • Edwin Huang

    Stanford University, SLAC National Accelerator Laboratory

  • Kurt Kummer

    European Synchrotron Radiation Facility

  • Nicholas B Brookes

    European Synchrotron Radiation Facility

  • Zhi-Xun Shen

    Stanford University, SLAC National Accelerator Laboratory

  • Thomas Devereaux

    Stanford University, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, SLAC National Accelerator Laboratory, Physics, Stanford University, SLAC and Stanford University, Institute for Materials and Energy Science, Stanford, SIMES, SLAC National Accelerator Lab, SLAC National Accelerator Laboratory and Stanford University, Stanford Institute for Materials and Energy Sciences, SLAC, Stanford, SIMES, SLAC, and Stanford University, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory and Stanford University

  • Wei-Sheng Lee

    SLAC National Accelerator Laboratory, SIMES, SLAC National Accelerator Lab