Controlled CVD growth of MoTe₂ and their use in near-infrared light detection

Due to their low symmetry ultrathin structures and unconventional dielectric screening effects, 2D transition metal dichalcogenides (TMDs) have attracted significant research attention utilizing their tunable optical-electronic properties. We established general strategies for to synthesize high-quality graphene and TMDs layers with tailored properties using chemical vapor deposition (CVD). Here, we demonstrate a salt-induced CVD strategy to synthesize mono- and few-layer 1T’ and 2H phase MoTe₂, exploiting richer electronic properties of this materials derived from their tunable structures. The obtained materials has demonstrate exceptional performance when used for the near-infrared (NIR) light detection, arise from their reduced band gap of 2H phase MoTe₂. This study provides a new materials synthesis method aiming for the fabrication of for highly efficient, and broadband NIR photodetector.