Direct graphene growth on Anodic Aluminum Oxide (AAO) under different conditions using chemical vapor deposition

Graphene is one of the promising 2D material due to their remarkable electrical, mechanical and chemical properties. In general growth conditions can be manipulated to synthesis graphene with different layer composition and properties. Direct synthesis of graphene is critical to establish new applications and come up with a manufacturing process for current applications. Recent studies started to focus on direct graphene growth on AAO and potential usage in new applications. The novelty of my study focusing on distinguishing between the quality of graphene growth with low pressure and ambient pressure.This paper will show the results of direct CVD graphene growth on AAO films with pore size ranging from 200 - 40(nm) under different conditions such as pressures (ambient & vacuum) and flow rates. (nm) .These parameters play a critical role in the quality and various properties of graphene growth. The presence of graphene was confirmed via Raman spectroscopy with a laser wavelength of 532 nm. The D-mode, G-mode and 2-D mode appears at approximately 1348 cm-1,1616 cm-1 and 2690 cm-1 respectively.
Additional characterization assessments such as SEM and AFM are ongoing and the results will be reported in the final paper.