Optically pumped lasing from Er-doped GaN epilayers in the infrared region

We report the realization of room-temperature, stimulated-emission in Er-doped GaN epilayers prepared by metal-organic chemical vapor deposition in the infrared region at room temperature. The lasing action of the Er doped GaN epilayers under optically pumped using an UV laser for the above bandgap excitation has been characterized. The observation of the amplified spontaneous emission has been presented through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing by the variable stripe technique. Varying excitation length of the variable stripe setup, we have observed the optical gain of the GaN:Er epilayers is up to 75 cm-1. The generation of coherent radiation at 1.54 μm at room temperature paves the way for extended functionalities and integration capabilities for optoelectronic devices.