Electrospun PEDOT:PSS nanoribbon field effect transistor with a ferroelectric polymer gate insulator

Poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) – PEDOT:PSS was electro-spun to produce high aspect ratio nanoribbons. The ribbons of varying thicknesses were electrically characterized in a field effect transistor (FET) configuration with ferroelectric (FE) poly(vinylidene fluoride-trifluoroethylene)-PVDF-TrFE as the top gate insulator. The devices exhibited p-type behavior consistent with hole charge transport in PEDOT-PSS and a memory window characteristic of a FE-FET. Such a memory effect has not been observed before in PEDOT-PSS. Thinner films exhibited stronger field effect with a change in the channel current of 104% in the on and off states. The charge mobility reached a maximum of 3 cm²/V-s for the 300nm thick nanoribbon. Thicker films did not show any field effect, suggesting that it is an effect confined to the PEDOT-PSS/PVDF-TrFE interface and does not penetrate deep into the bulk of the PEDOT-PSS film.