A Schottky diode fabricated by crossing MoS₂ with an electro-spun PEDOT-PSS nano-ribbon

Monolayer MoS₂ was grown via chemical vapor deposition while PEDOT-PSS nanoribbons were fabricated via electrospinning. Each of these materials was electrically characterized separately in a field effect transistor configuration using SiO₂ as the gate dielectric. MoS₂ exhibited n-type behavior while PEDOT-PSS showed an Ohmic response. By crossing MoS₂ with a PEDOT-PSS nanoribbon, the current-voltage curve across the junction was non-linear and similar to that of a diode. When a positive (negative) voltage was applied to PEDOT-PSS (MoS₂), the device turned on in the first quadrant of the I-V curve. Reversing the external connections resulted in the diode turning on in the third quadrant. The rectification ratio was 625 and the turn-on voltage was 0.1V. The device output data was analyzed using the standard thermionic emission model of a Schottky junction yielding an ideality parameter of 1.9 and a barrier height of 0.18eV. A low turn voltage from our diode makes it better for small signal detection and has the advantages of having a higher ac rectification efficiency and a lower power loss compared to standard Si or Ge p-n diodes.