Hole spins in Ge/Si nanowires
POSTER
Abstract
A particularly promising feature of hole spins in Ge/Si core/shell NWs is the nature of spin-orbit interaction (SOI) in this system. Confinement to one dimension gives rise to an SOI in the valence band, which is predicted to be both strong and electrically tunable. This promises electrical gating of the SOI, allowing to switch to a large SOI for high interaction strengths and fast quantum operations, or to turn off SOI for increased qubit coherence.
We demonstrate and characterize single, double and triple QD arrays in Ge/Si NWs, all with low hole occupation numbers. In the double QD configuration, we observe Pauli spin blockade and see indications of a sizeable SOI causing spin flips. Finally, we report progress towards electrically tuning the SOI.
Presenters
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Floris Braakman
Physics, University of Basel, University of Basel
Authors
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Florian NM Froning
Physics, University of Basel
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Mirko Rehmann
Physics, University of Basel
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J Ridderbos
Physics, University of Twente
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Matthias Brauns
Physics, Institute of Science and Technology
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Floris Zwanenburg
Physics, University of Twente, University of Twente
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Ang Li
Physics, Bejing University of Technology
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Erik P. A. M. Bakkers
Applied Physics, Eindhoven University of Technology, Eindhoven University of Technology, Applied Physics, Eindhoven Univ. of Technology, Department of Applied Physics, Eindhoven University of Technology, TU Eindhoven, Eindhoven University of Technology, Department of Applied Physics, Physics, TU Eindhoven
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Dominik Zumbuhl
University of Basel, Department of Physics, Univ of Basel, University of Basel, Department of Physics, Department of Physics, University of Basel, Physics, University of Basel
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Floris Braakman
Physics, University of Basel, University of Basel